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Sankore

Named after the University of Sankore in Timbuktu — one of the world’s oldest centres of learning. Every figure here is computed from work-level records in our own graph, never copied from a source’s summary count.

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OpenAlex — works, authorships, subject classification
ROR — institutional identity
ORCID — researcher identity
Crossref — publisher confirmation

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Coverage is partial and says so. A country appears with its research output only once its works have been swept; until then the portal shows whatever the graph happens to hold for it and labels it as exactly that.

Denis Jonathan, D. · Sankore

The Federal Polytechnic, Ado-Ekiti

Denis Jonathan, D.

Name matching only

This profile was assembled from author names on publications. Open indexes routinely split one researcher across several such profiles, so these totals may be incomplete. 2 other profiles were folded into this one.

Publications

4

Citations

0

h-index

0

Computed over the works the graph holds, so it is a floor rather than a career figure.

i10-index

0

Works published 2022 onward have been swept for this country. Figures are complete within that window, to the extent the open indexes are.

Publications

4 works in the graph, newest first.

Study the Performance of Silicon-On-Insulator Based Junction Less Transistor Using MOS and FGMOS 6t-Sram Cells
2025Engineering and Technology JournalJournalOpen accessSenior author0 citations10.47191/etj/v10i07.17
Optimization of Parameters of Line-Fed Micro-Strip Patch Antenna Using Fr-4 And Rogers Tmm6 Substrates
2025Engineering and Technology JournalJournalOpen access0 citations10.47191/etj/v10i08.54
EFFECTS OF SCALING OF JUNCTIONLESS TRANSISTOR PARAMETERS WITH SILICON DIOXIDE (SIO2) AND SILICON NITRATE (SI3N4) GATE OXIDES ON THE ELECTRICAL CHARACTERISTICS OF THE DEVICES
2023Zenodo (CERN European Organization for Nuclear Research)JournalOpen access0 citations10.5281/zenodo.8195487
EFFECTS OF SCALING OF JUNCTIONLESS TRANSISTOR PARAMETERS WITH SILICON DIOXIDE (SIO2) AND SILICON NITRATE (SI3N4) GATE OXIDES ON THE ELECTRICAL CHARACTERISTICS OF THE DEVICES
2023Engineering and Technology JournalJournalOpen access0 citations10.47191/etj/v8i7.12