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Sankore

Named after the University of Sankore in Timbuktu — one of the world’s oldest centres of learning. Every figure here is computed from work-level records in our own graph, never copied from a source’s summary count.

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EFFECTS OF SCALING OF JUNCTIONLESS TRANSISTOR PARAMETERS WITH SILICON DIOXIDE (SIO2) AND SILICON NITRATE (SI3N4) GATE OXIDES ON THE ELECTRICAL CHARACTERISTICS OF THE DEVICES

2023Zenodo (CERN European Organization for Nuclear Research)JournalOpen access

10.5281/zenodo.8195487 Full text0 citations

Authors

5 authors.

Sule, Mohammed AdamuFirst author
- The Federal Polytechnic, Ado-Ekiti (NG)
Denis Jonathan, D.
- The Federal Polytechnic, Ado-Ekiti (NG)
Njodi, Bashir I.
- The Federal Polytechnic, Ado-Ekiti (NG)
KabiruA. Saidu
- The Federal Polytechnic, Ado-Ekiti (NG)
as printed: K.A Saidu
Abdulkadir, MaryamSenior author
- The Federal Polytechnic, Ado-Ekiti (NG)

Fields

Assignment is probabilistic — a work belongs to several fields in proportions.

Material Properties and Applicationslevel 3 · 0.83
Gas Sensing Nanomaterials and Sensorslevel 3 · 0.81
Electromagnetic Launch and Propulsion Technologylevel 3 · 0.72

Sources

Several sources describing one work is the point — it means the record rests on more than one authority.

openalexseen September 9, 2026
2023 · Zenodo (CERN European Organization for Nuclear Research) · 0 citations
https://openalex.org/W4385375777

EFFECTS OF SCALING OF JUNCTIONLESS TRANSISTOR PARAMETERS WITH SILICON DIOXIDE (SIO2) AND SILICON NITRATE (SI3N4) GATE OXIDES ON THE ELECTRICAL CHARACTERISTICS OF THE DEVICES · Sankore