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Sankore

Named after the University of Sankore in Timbuktu — one of the world’s oldest centres of learning. Every figure here is computed from work-level records in our own graph, never copied from a source’s summary count.

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Coverage is partial and says so. A country appears with its research output only once its works have been swept; until then the portal shows whatever the graph happens to hold for it and labels it as exactly that.

EFFECTS OF SCALING OF JUNCTIONLESS TRANSISTOR PARAMETERS WITH SILICON DIOXIDE (SIO2) AND SILICON NITRATE (SI3N4) GATE OXIDES ON THE ELECTRICAL CHARACTERISTICS OF THE DEVICES

2023Engineering and Technology JournalJournalOpen access

10.47191/etj/v8i7.12 Full text0 citations

Authors

5 authors.

Sule, Mohammed AdamuFirst author
- The Federal Polytechnic, Ado-Ekiti (NG)
as printed: Mohammed Adamu Sule
Denis Jonathan, D.
- The Federal Polytechnic, Ado-Ekiti (NG)
as printed: Denis Jonathan D
Njodi, Bashir I.
- The Federal Polytechnic, Ado-Ekiti (NG)
as printed: Bashir I. Njodi
KabiruA. Saidu
- The Federal Polytechnic, Ado-Ekiti (NG)
as printed: K.A . Saidu
Abdulkadir, MaryamSenior author
- The Federal Polytechnic, Ado-Ekiti (NG)
as printed: Maryam Abdulkadir

Fields

Assignment is probabilistic — a work belongs to several fields in proportions.

Semiconductor materials and deviceslevel 3 · 1.00
Advancements in Semiconductor Devices and Circuit Designlevel 3 · 1.00
Integrated Circuits and Semiconductor Failure Analysislevel 3 · 1.00

Sources

Several sources describing one work is the point — it means the record rests on more than one authority.

openalexseen September 9, 2026
2023 · Engineering and Technology Journal · 0 citations
https://openalex.org/W4385461307

EFFECTS OF SCALING OF JUNCTIONLESS TRANSISTOR PARAMETERS WITH SILICON DIOXIDE (SIO2) AND SILICON NITRATE (SI3N4) GATE OXIDES ON THE ELECTRICAL CHARACTERISTICS OF THE DEVICES · Sankore