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Sankore

Named after the University of Sankore in Timbuktu — one of the world’s oldest centres of learning. Every figure here is computed from work-level records in our own graph, never copied from a source’s summary count.

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Simulations of p‐Channel GaN‐Based Metal‐Oxide‐Semiconductor Heterostructure Field‐Effect Transistors for Normally Off Operation

2026physica status solidi (a)Journal

10.1002/pssa.70448 Full text0 citations

Authors

4 authors across 4 institutions in 2 countries.

Brendan Chijioke UbochiFirst authorCorresponding
- Federal University of Technology (NG)
as printed: Brendan Ubochi
K. Ahmeda
as printed: Khaled Ahmeda
B. Benbakhti
as printed: Brahim Benbakhti
Karol KalnaSenior author

Fields

Assignment is probabilistic — a work belongs to several fields in proportions.

GaN-based semiconductor devices and materialslevel 3 · 0.97
Silicon Carbide Semiconductor Technologieslevel 3 · 0.02
Advancements in Semiconductor Devices and Circuit Designlevel 3 · 0.00

Sources

Several sources describing one work is the point — it means the record rests on more than one authority.

openalexseen September 9, 2026
2026 · physica status solidi (a) · 0 citations
https://openalex.org/W7171829305

Simulations of p‐Channel GaN‐Based Metal‐Oxide‐Semiconductor Heterostructure Field‐Effect Transistors for Normally Off Operation · Sankore