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Sankore

Named after the University of Sankore in Timbuktu — one of the world’s oldest centres of learning. Every figure here is computed from work-level records in our own graph, never copied from a source’s summary count.

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Self-Heating and Hotspots in GaN HEMTs with Conventional and T-Shape Gates

2024Publication

10.1109/wipdaeurope62087.2024.10797221 Full text0 citations

Authors

7 authors across 5 institutions in 2 countries.

Brendan Chijioke UbochiFirst author
- Federal University of Technology (NG)
as printed: B. Ubochi
K. Ahmeda
M. Elksne
B. Benbakhti
Abdullah Al-khalidi
as printed: A. Al-Khalidi
Edward Wasige
as printed: E. Wasige
Karol KalnaSenior author
as printed: K. Kalna

Fields

Assignment is probabilistic — a work belongs to several fields in proportions.

GaN-based semiconductor devices and materialslevel 3 · 1.00
Silicon Carbide Semiconductor Technologieslevel 3 · 0.98
Semiconductor Quantum Structures and Deviceslevel 3 · 0.98

Sources

Several sources describing one work is the point — it means the record rests on more than one authority.

openalexseen September 9, 2026
2024 · 0 citations
https://openalex.org/W4405602339

Self-Heating and Hotspots in GaN HEMTs with Conventional and T-Shape Gates · Sankore