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Sankore

Named after the University of Sankore in Timbuktu — one of the world’s oldest centres of learning. Every figure here is computed from work-level records in our own graph, never copied from a source’s summary count.

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Effects of Interfacial Parameters and Temperature on Effective Schottky Barrier Height of Metal-Wrapped (Al-Gan) Nanowire Schottky Diode

2024International Journal of Development Mathematics (IJDM)JournalOpen access

10.62054/ijdm/0104.08 Full text0 citations

Authors

4 authors.

Dogari JohnFirst author
- Modibbo Adama University of Technology (NG)
Dogari JohnFirst author
- Modibbo Adama University of Technology (NG)
Adam Usman
- Modibbo Adama University of Technology (NG)
Yerima BensonSenior author
- Modibbo Adama University of Technology (NG)

Fields

Assignment is probabilistic — a work belongs to several fields in proportions.

Semiconductor materials and interfaceslevel 3 · 1.00
Nanowire Synthesis and Applicationslevel 3 · 1.00
GaN-based semiconductor devices and materialslevel 3 · 1.00

Sources

Several sources describing one work is the point — it means the record rests on more than one authority.

openalexseen September 9, 2026
2024 · International Journal of Development Mathematics (IJDM) · 0 citations
https://openalex.org/W4405488336

Effects of Interfacial Parameters and Temperature on Effective Schottky Barrier Height of Metal-Wrapped (Al-Gan) Nanowire Schottky Diode · Sankore