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Sankore

Named after the University of Sankore in Timbuktu — one of the world’s oldest centres of learning. Every figure here is computed from work-level records in our own graph, never copied from a source’s summary count.

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Coverage is partial and says so. A country appears with its research output only once its works have been swept; until then the portal shows whatever the graph happens to hold for it and labels it as exactly that.

Drain current characteristics of Silicon Nanowire Field-Effect Transistors (SNWFETs) with SiO2, ZrO2 and HfO2 as dielectric materials

2024AIP conference proceedingsPublication

10.1063/5.0224408 Full text0 citations

Authors

4 authors across 2 institutions in 2 countries.

Tijjani AbdulrazakFirst authorCorresponding
- Bayero University Kano (NG)
H. Bhoomeeswaran
G.S.M. Galadanci
- Bayero University Kano (NG)
as printed: G. S. M. Galadanci
T. H. DarmaSenior author
- Bayero University Kano (NG)

Fields

Assignment is probabilistic — a work belongs to several fields in proportions.

Advancements in Semiconductor Devices and Circuit Designlevel 3 · 1.00
Semiconductor materials and deviceslevel 3 · 1.00
Nanowire Synthesis and Applicationslevel 3 · 1.00

Sources

Several sources describing one work is the point — it means the record rests on more than one authority.

openalexseen September 9, 2026
2024 · AIP conference proceedings · 0 citations
https://openalex.org/W4402160479

Drain current characteristics of Silicon Nanowire Field-Effect Transistors (SNWFETs) with SiO2, ZrO2 and HfO2 as dielectric materials · Sankore