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Sankore

Named after the University of Sankore in Timbuktu — one of the world’s oldest centres of learning. Every figure here is computed from work-level records in our own graph, never copied from a source’s summary count.

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Coverage is partial and says so. A country appears with its research output only once its works have been swept; until then the portal shows whatever the graph happens to hold for it and labels it as exactly that.

Effect of electron mobility variation on short channel effects in nanoscale double gate FinFETs: A comparative study

2024International Journal of Physical ResearchJournalOpen access

10.14419/n9r2ww08 Full text0 citations

Authors

3 authors.

Nura Muhammad ShehuFirst author
- Bayero University Kano (NG)
G. Babaji
- Bayero University Kano (NG)
as printed: Garba Babaji
Mutari Hajara AliSenior author
- Bayero University Kano (NG)

Fields

Assignment is probabilistic — a work belongs to several fields in proportions.

Advancements in Semiconductor Devices and Circuit Designlevel 3 · 1.00
Semiconductor materials and deviceslevel 3 · 1.00
Ferroelectric and Negative Capacitance Deviceslevel 3 · 1.00

Sources

Several sources describing one work is the point — it means the record rests on more than one authority.

openalexseen September 9, 2026
2024 · International Journal of Physical Research · 0 citations
https://openalex.org/W4399829639

Effect of electron mobility variation on short channel effects in nanoscale double gate FinFETs: A comparative study · Sankore