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Sankore

Named after the University of Sankore in Timbuktu — one of the world’s oldest centres of learning. Every figure here is computed from work-level records in our own graph, never copied from a source’s summary count.

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First-Principles Investigation of Charge Transfer Mechanism of B-Doped 3C-SiC Semiconductor Material

2024World Journal of Condensed Matter PhysicsJournalOpen access

10.4236/wjcmp.2024.142004 Full text0 citations

Authors

10 authors across 5 institutions in 2 countries.

A. A. DaudaFirst author
as printed: Abdullahi Alkali Dauda
M.Y. Onimisi
- Nigerian Defence Academy (NG)
as printed: Muhammad Yusuf Onimisi
Adeyemi Joshua Owolabi
- Nigerian Defence Academy (NG)
Hammed Adeneyi Lawal
Hassan Gambo
- Nigerian Defence Academy (NG)
as printed: Hassan Muhammad Gambo
B. M. Aliyu
- Nigerian Defence Academy (NG)
as printed: Bashir Mohammed Aliyu
Surajo Bala
- Umaru Musa Yar'adua University (NG)
Muhammad Lamido Madugu
- Gombe State University (NG)
Muhammad Abdurrahman Nainna
Johnson Akinade BamikoleSenior author
- Federal University Lafia (NG)

Fields

Assignment is probabilistic — a work belongs to several fields in proportions.

Silicon Carbide Semiconductor Technologieslevel 3 · 1.00
Semiconductor materials and deviceslevel 3 · 1.00
Advanced ceramic materials synthesislevel 3 · 1.00

Sources

Several sources describing one work is the point — it means the record rests on more than one authority.

openalexseen September 9, 2026
2024 · World Journal of Condensed Matter Physics · 0 citations
https://openalex.org/W4399093788

First-Principles Investigation of Charge Transfer Mechanism of B-Doped 3C-SiC Semiconductor Material · Sankore