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Sankore

Named after the University of Sankore in Timbuktu — one of the world’s oldest centres of learning. Every figure here is computed from work-level records in our own graph, never copied from a source’s summary count.

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Evaluation of DC Performance of Buffer-Free AlGaN/GaN HEMT on SiC Relative to the Thickness of AlN Nucleation Layer

2023Publication

10.1109/irec59750.2023.10389436 Full text0 citations

Authors

6 authors across 3 institutions in 2 countries.

Sahalu HassanFirst author
- Umaru Musa Yar'adua University (NG)
Nasiru B. Kadandani
- Bayero University Kano (NG)
Kaivan Karami
Mahmud Dwidar
Edward Wasige
Abdullah Al-khalidiSenior author

Fields

Assignment is probabilistic — a work belongs to several fields in proportions.

GaN-based semiconductor devices and materialslevel 3 · 1.00
Ga2O3 and related materialslevel 3 · 1.00
Silicon Carbide Semiconductor Technologieslevel 3 · 1.00

Sources

Several sources describing one work is the point — it means the record rests on more than one authority.

openalexseen September 9, 2026
2023 · 0 citations
https://openalex.org/W4390970898

Evaluation of DC Performance of Buffer-Free AlGaN/GaN HEMT on SiC Relative to the Thickness of AlN Nucleation Layer · Sankore