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Sankore

Named after the University of Sankore in Timbuktu — one of the world’s oldest centres of learning. Every figure here is computed from work-level records in our own graph, never copied from a source’s summary count.

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Coverage is partial and says so. A country appears with its research output only once its works have been swept; until then the portal shows whatever the graph happens to hold for it and labels it as exactly that.

Study ofImpact of HfO2gate oxide on the Electrical Characteristics of Nanowire Junction lessTransistor

2022International Journal of Advances in Scientific Research and EngineeringJournalOpen access

10.31695/ijasre.2022.8.11.7 Full text0 citations

Authors

6 authors across 4 institutions in 1 country.

Dahiru Ya’u GitalFirst author
- Sa'adu Zungur University (NG)
Moh’d Adamu Sule
- Federal Polytechnic Ede (NG)
- Federal Polytechnic Oko (NG)
- The Federal Polytechnic, Ado-Ekiti (NG)
Abbas Adamu
- Federal Polytechnic Ede (NG)
- Federal Polytechnic Oko (NG)
- The Federal Polytechnic, Ado-Ekiti (NG)
Mohammed, Sanusi
- The Federal Polytechnic, Ado-Ekiti (NG)
as printed: Sanusi Mohammed
KabiruA. Saidu
Buba Kari JodaSenior author
- Federal Polytechnic Ede (NG)
- Federal Polytechnic Oko (NG)
- The Federal Polytechnic, Ado-Ekiti (NG)

Fields

Assignment is probabilistic — a work belongs to several fields in proportions.

Advancements in Semiconductor Devices and Circuit Designlevel 3 · 1.00
Integrated Circuits and Semiconductor Failure Analysislevel 3 · 0.98
Semiconductor materials and deviceslevel 3 · 0.98

Sources

Several sources describing one work is the point — it means the record rests on more than one authority.

openalexseen September 9, 2026
2022 · International Journal of Advances in Scientific Research and Engineering · 0 citations
https://openalex.org/W4312802347

Study ofImpact of HfO2gate oxide on the Electrical Characteristics of Nanowire Junction lessTransistor · Sankore