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Sankore

Named after the University of Sankore in Timbuktu — one of the world’s oldest centres of learning. Every figure here is computed from work-level records in our own graph, never copied from a source’s summary count.

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High-Performance Atomic Layer Deposited Al2O3 Insulator Based Metal-Insulator-Metal Diode

2022FUOYE Journal of Engineering and TechnologyJournalOpen access

10.46792/fuoyejet.v7i2.815 Full text1 citations

Authors

3 authors across 3 institutions in 2 countries.

David EtorFirst authorCorresponding
- University of Jos (NG)
L.E. Dodd
as printed: Linzi Emma Dodd
Claudio BaloccoSenior author

Fields

Assignment is probabilistic — a work belongs to several fields in proportions.

Semiconductor materials and deviceslevel 3 · 1.00
Ferroelectric and Negative Capacitance Deviceslevel 3 · 1.00
Advancements in Semiconductor Devices and Circuit Designlevel 3 · 1.00

Sources

Several sources describing one work is the point — it means the record rests on more than one authority.

openalexseen September 9, 2026
2022 · FUOYE Journal of Engineering and Technology · 1 citations
https://openalex.org/W4284988565

High-Performance Atomic Layer Deposited Al2O3 Insulator Based Metal-Insulator-Metal Diode · Sankore