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Sankore

Named after the University of Sankore in Timbuktu — one of the world’s oldest centres of learning. Every figure here is computed from work-level records in our own graph, never copied from a source’s summary count.

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Coverage is partial and says so. A country appears with its research output only once its works have been swept; until then the portal shows whatever the graph happens to hold for it and labels it as exactly that.

Effect of Single Atom Doping on Structural, Electronic and Magnetic Properties of Hexagonal Silicon Carbide (4H-SiC) for Spintronic Application: A first principle study

2023Physics AccessJournalOpen access

10.47514/phyaccess.2023.3.1.001 Full text2 citations

Authors

4 authors across 2 institutions in 1 country.

Yakubu A TankoFirst author
- Kaduna State University (NG)
Oyedare T Maha
- Kaduna State University (NG)
Shuaibu AlhassanCorresponding
- Kaduna State University (NG)
as printed: Alhassan Shuaibu
Peter OlusolaSenior author
- Federal Polytechnic Ede (NG)

Fields

Assignment is probabilistic — a work belongs to several fields in proportions.

Silicon Carbide Semiconductor Technologieslevel 3 · 1.00
Aluminum Alloys Composites Propertieslevel 3 · 0.99
Boron and Carbon Nanomaterials Researchlevel 3 · 0.98

Sources

Several sources describing one work is the point — it means the record rests on more than one authority.

openalexseen September 9, 2026
2023 · Physics Access · 2 citations
https://openalex.org/W4387432477

Effect of Single Atom Doping on Structural, Electronic and Magnetic Properties of Hexagonal Silicon Carbide (4H-SiC) for Spintronic Application: A first principle study · Sankore