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Sankore

Named after the University of Sankore in Timbuktu — one of the world’s oldest centres of learning. Every figure here is computed from work-level records in our own graph, never copied from a source’s summary count.

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Thermal characterization and stress analysis of Ho2O3 thin film on 4H–SiC substrate

2022Materials Science in Semiconductor ProcessingJournal

10.1016/j.mssp.2022.107110 Full text2 citations

Authors

6 authors across 3 institutions in 3 countries.

Kazeem Olabisi OdesanyaFirst author
- Lagos State University (NG)
Roslina Ahmad
Andri Andriyana
Sedat Bingol
Ridvan Çetinkaya
Yew Hoong WongSenior authorCorresponding

Fields

Assignment is probabilistic — a work belongs to several fields in proportions.

Thermal properties of materialslevel 3 · 1.00
Semiconductor materials and deviceslevel 3 · 1.00
ZnO doping and propertieslevel 3 · 1.00

Sources

Several sources describing one work is the point — it means the record rests on more than one authority.

openalexseen September 9, 2026
2022 · Materials Science in Semiconductor Processing · 2 citations
https://openalex.org/W4296225900

Thermal characterization and stress analysis of Ho2O3 thin film on 4H–SiC substrate · Sankore