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Sankore

Named after the University of Sankore in Timbuktu — one of the world’s oldest centres of learning. Every figure here is computed from work-level records in our own graph, never copied from a source’s summary count.

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Coverage is partial and says so. A country appears with its research output only once its works have been swept; until then the portal shows whatever the graph happens to hold for it and labels it as exactly that.

Defect engineering with group III dopants in 2D monolayer SiC for improved electronic devices

2026Materials Science in Semiconductor ProcessingJournal

10.1016/j.mssp.2026.110465 Full text0 citations

Authors

5 authors across 6 institutions in 2 countries.

E. IgumborFirst authorCorresponding
- University of Johannesburg (ZA)
as printed: Emmanuel Igumbor
Patience Ajeh
- African Institute of Science and Technology (NG)
Edwin Mapasha
- University of Pretoria (ZA)
Ezekiel Omotoso
- Obafemi Awolowo University (NG)
Abdulrafiu Tunde RajiSenior author
- National Institute for Theoretical Physics (ZA)
- University of South Africa (ZA)
as printed: Abdulrafiu Raji

Fields

Assignment is probabilistic — a work belongs to several fields in proportions.

Silicon Carbide Semiconductor Technologieslevel 3 · 0.48
MXene and MAX Phase Materialslevel 3 · 0.26
Graphene research and applicationslevel 3 · 0.05

Sources

Several sources describing one work is the point — it means the record rests on more than one authority.

openalexseen September 9, 2026
2026 · Materials Science in Semiconductor Processing · 0 citations
https://openalex.org/W7128422954

Defect engineering with group III dopants in 2D monolayer SiC for improved electronic devices · Sankore