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Sankore

Named after the University of Sankore in Timbuktu — one of the world’s oldest centres of learning. Every figure here is computed from work-level records in our own graph, never copied from a source’s summary count.

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Coverage is partial and says so. A country appears with its research output only once its works have been swept; until then the portal shows whatever the graph happens to hold for it and labels it as exactly that.

Analysis of Temperature‐Dependent Characteristics of Cr/P‐Doped Si Schottky Barrier Diodes before and after 5.4 MeV 241 Am Irradiation

2026physica status solidi (a)JournalOpen access

10.1002/pssa.202500690 Full text0 citations

Authors

5 authors across 3 institutions in 2 countries.

Ezekiel OmotosoFirst authorCorresponding
- University of Johannesburg (ZA)
- University of Pretoria (ZA)
- Obafemi Awolowo University (NG)
as printed: E. Omotoso
W.E. Meyer
- University of Pretoria (ZA)
as printed: W. E. Meyer
C.J. Sheppard
- University of Johannesburg (ZA)
as printed: C. J. Sheppard
E. Igumbor
- University of Johannesburg (ZA)
A.R.E. PrinslooSenior author
- University of Johannesburg (ZA)
as printed: A. R. E. Prinsloo

Fields

Assignment is probabilistic — a work belongs to several fields in proportions.

Semiconductor materials and interfaceslevel 3 · 0.65
Silicon and Solar Cell Technologieslevel 3 · 0.17
Silicon Carbide Semiconductor Technologieslevel 3 · 0.06

Sources

Several sources describing one work is the point — it means the record rests on more than one authority.

openalexseen September 9, 2026
2026 · physica status solidi (a) · 0 citations
https://openalex.org/W7125846782

Analysis of Temperature‐Dependent Characteristics of Cr/P‐Doped Si Schottky Barrier Diodes before and after 5.4 MeV 241 Am Irradiation · Sankore