Countries
Institutions
Fields
Rankings
Compare

Search institutions, scholars, countries and publications

Sankore

Named after the University of Sankore in Timbuktu — one of the world’s oldest centres of learning. Every figure here is computed from work-level records in our own graph, never copied from a source’s summary count.

Built from

OpenAlex — works, authorships, subject classification
ROR — institutional identity
ORCID — researcher identity
Crossref — publisher confirmation

Browse

Countries
Institutions
Fields
Rankings
What we cover

Coverage is partial and says so. A country appears with its research output only once its works have been swept; until then the portal shows whatever the graph happens to hold for it and labels it as exactly that.

DLTS study of the influence of annealing on deep level defects induced in xenon ions implanted n-type 4H-SiC

2022Journal of Materials Science Materials in ElectronicsJournal

10.1007/s10854-022-08471-8 Full text8 citations

Authors

7 authors across 2 institutions in 1 country.

Ezekiel OmotosoFirst authorCorresponding
- University of Johannesburg (ZA)
W.E. Meyer
- University of Pretoria (ZA)
as printed: Walter E. Meyer
E. Igumbor
- University of Johannesburg (ZA)
as printed: Emmanuel Igumbor
Thulani Hlatshwayo
- University of Pretoria (ZA)
as printed: Thulani T. Hlatshwayo
A.R.E. Prinsloo
- University of Johannesburg (ZA)
as printed: Aletta R. E. Prinsloo
F. Danie Auret
- University of Pretoria (ZA)
C.J. SheppardSenior authorCorresponding
- University of Johannesburg (ZA)
as printed: Charles J. Sheppard

Fields

Assignment is probabilistic — a work belongs to several fields in proportions.

Semiconductor materials and interfaceslevel 3 · 1.00
Silicon Carbide Semiconductor Technologieslevel 3 · 1.00
Integrated Circuits and Semiconductor Failure Analysislevel 3 · 1.00

Sources

Several sources describing one work is the point — it means the record rests on more than one authority.

openalexseen September 8, 2026
2022 · Journal of Materials Science Materials in Electronics · 8 citations
https://openalex.org/W4281625491

DLTS study of the influence of annealing on deep level defects induced in xenon ions implanted n-type 4H-SiC · Sankore