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Sankore

Named after the University of Sankore in Timbuktu — one of the world’s oldest centres of learning. Every figure here is computed from work-level records in our own graph, never copied from a source’s summary count.

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Review—Gate Oxide Thin Films Based on Silicon Carbide

2022ECS Journal of Solid State Science and TechnologyJournal

10.1149/2162-8777/ac84ff Full text5 citations

Authors

5 authors across 3 institutions in 3 countries.

Kazeem Olabisi OdesanyaFirst author
- Lagos State University (NG)
Roslina Ahmad
Andri Andriyana
Sedat Bingol
Yew Hoong WongSenior author

Fields

Assignment is probabilistic — a work belongs to several fields in proportions.

Semiconductor materials and deviceslevel 3 · 1.00
Silicon Carbide Semiconductor Technologieslevel 3 · 1.00
Advancements in Semiconductor Devices and Circuit Designlevel 3 · 1.00

Sources

Several sources describing one work is the point — it means the record rests on more than one authority.

openalexseen September 9, 2026
2022 · ECS Journal of Solid State Science and Technology · 5 citations
https://openalex.org/W4288430921

Review—Gate Oxide Thin Films Based on Silicon Carbide · Sankore