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Sankore

Named after the University of Sankore in Timbuktu — one of the world’s oldest centres of learning. Every figure here is computed from work-level records in our own graph, never copied from a source’s summary count.

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Coverage is partial and says so. A country appears with its research output only once its works have been swept; until then the portal shows whatever the graph happens to hold for it and labels it as exactly that.

DLTS characterisation of 107 MeV krypton ion-irradiated nitrogen-doped 4H-silicon carbide

2024Journal of Materials Science Materials in ElectronicsJournalOpen access

10.1007/s10854-024-14060-8 Full text2 citations

Authors

3 authors across 3 institutions in 2 countries.

Ezekiel OmotosoFirst authorCorresponding
- University of Pretoria (ZA)
- Obafemi Awolowo University (NG)
E. Igumbor
- University of Johannesburg (ZA)
as printed: Emmanuel Igumbor
W.E. MeyerSenior author
- University of Pretoria (ZA)
as printed: Walter E. Meyer

Fields

Assignment is probabilistic — a work belongs to several fields in proportions.

Semiconductor materials and deviceslevel 3 · 1.00
Silicon Carbide Semiconductor Technologieslevel 3 · 1.00
Integrated Circuits and Semiconductor Failure Analysislevel 3 · 1.00

Sources

Several sources describing one work is the point — it means the record rests on more than one authority.

openalexseen September 9, 2026
2024 · Journal of Materials Science Materials in Electronics · 2 citations
https://openalex.org/W4405515745

DLTS characterisation of 107 MeV krypton ion-irradiated nitrogen-doped 4H-silicon carbide · Sankore