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Sankore

Named after the University of Sankore in Timbuktu — one of the world’s oldest centres of learning. Every figure here is computed from work-level records in our own graph, never copied from a source’s summary count.

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Coverage is partial and says so. A country appears with its research output only once its works have been swept; until then the portal shows whatever the graph happens to hold for it and labels it as exactly that.

Effects of O2 and N2 Gas Concentration on the Formation of Ho2O3 Gate Oxide on 4H-SiC Substrate

2022SiliconJournal

10.1007/s12633-022-02040-8 Full text9 citations

Authors

9 authors across 3 institutions in 3 countries.

Kazeem Olabisi OdesanyaFirst author
- Lagos State University (NG)
Roslina Ahmad
Andri Andriyana
S Ramesh
as printed: S. Ramesh
Chou Yong Tan
Chou Yong Tan
Chou Yong Tan
Chou Yong Tan
Yew Hoong WongSenior authorCorresponding

Fields

Assignment is probabilistic — a work belongs to several fields in proportions.

Semiconductor materials and deviceslevel 3 · 1.00
Silicon Carbide Semiconductor Technologieslevel 3 · 1.00
ZnO doping and propertieslevel 3 · 1.00

Sources

Several sources describing one work is the point — it means the record rests on more than one authority.

openalexseen September 9, 2026
2022 · Silicon · 9 citations
https://openalex.org/W4289731098

Effects of O2 and N2 Gas Concentration on the Formation of Ho2O3 Gate Oxide on 4H-SiC Substrate · Sankore