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Sankore

Named after the University of Sankore in Timbuktu — one of the world’s oldest centres of learning. Every figure here is computed from work-level records in our own graph, never copied from a source’s summary count.

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Electronic properties and defect levels induced by n / p -type defect-complexes in Ge

2022Materials Science in Semiconductor ProcessingJournal

10.1016/j.mssp.2022.106906 Full text17 citations

Authors

7 authors across 6 institutions in 4 countries.

E. IgumborFirst authorCorresponding
- University of Johannesburg (ZA)
O. Olaniyan
- University of the Free State (ZA)
G.M. Dongho-Nguimdo
- University of Buea (CM)
Refilwe E. Mapasha
- University of Pretoria (ZA)
as printed: R.E. Mapasha
Sohail Ahmad
as printed: S. Ahmad
E. Omotoso
- Obafemi Awolowo University (NG)
W.E. MeyerSenior authorCorresponding
- University of Pretoria (ZA)

Fields

Assignment is probabilistic — a work belongs to several fields in proportions.

Semiconductor materials and interfaceslevel 3 · 1.00
Semiconductor materials and deviceslevel 3 · 1.00
Silicon Nanostructures and Photoluminescencelevel 3 · 1.00

Sources

Several sources describing one work is the point — it means the record rests on more than one authority.

openalexseen September 24, 2026
2022 · Materials Science in Semiconductor Processing · 17 citations
https://openalex.org/W4283750616

Electronic properties and defect levels induced by n / p -type defect-complexes in Ge · Sankore